摘要
Y 1-a, Gd a) 3-x(Al 1-b, Ga b) 5O 12∶Ce 3+ x was synthesized by high-temperature solid state reaction in reducing atmosphere based on high purity raw materials. The influences of Y 3+, Gd 3+, Al 3+, Ga 3+ and activator-Ce 3+ on the performance of the phosphor were investigated. Ce 3+ is the luminescent center and activates the phosphor after it replaces Y partially. When x is less than 0.12, the volume of the crystal and the emission intensity of the phosphor increase with the quantity of Ce 3+. When CeO 2 is added too much, the phase CeAlO 3 will appear. The excitation and emission peaks of the phosphor will shift to longer wavelength when the amount of Gd 3+ increases. The wavelength of the emission peak can shift about 20 nm when a equals 0.45. In opposite, the excitation and emission peaks will shift to shorter wavelength, when part of Al 3+ is replaced by Ga 3+. The wavelength of the emission peak can shift about 20 nm when b equals 0.55. Through the replacemeat of Y 3+ or Al 3+ by Gd 3+ or Ga 3+, the emission peak of the phosphor can be adjusted from 520 to 560 nm. In this way, the phosphor is more suitable for different chips.
Y 1-a, Gd a) 3-x(Al 1-b, Ga b) 5O 12∶Ce 3+ x was synthesized by high-temperature solid state reaction in reducing atmosphere based on high purity raw materials. The influences of Y 3+, Gd 3+, Al 3+, Ga 3+ and activator-Ce 3+ on the performance of the phosphor were investigated. Ce 3+ is the luminescent center and activates the phosphor after it replaces Y partially. When x is less than 0.12, the volume of the crystal and the emission intensity of the phosphor increase with the quantity of Ce 3+. When CeO 2 is added too much, the phase CeAlO 3 will appear. The excitation and emission peaks of the phosphor will shift to longer wavelength when the amount of Gd 3+ increases. The wavelength of the emission peak can shift about 20 nm when a equals 0.45. In opposite, the excitation and emission peaks will shift to shorter wavelength, when part of Al 3+ is replaced by Ga 3+. The wavelength of the emission peak can shift about 20 nm when b equals 0.55. Through the replacemeat of Y 3+ or Al 3+ by Gd 3+ or Ga 3+, the emission peak of the phosphor can be adjusted from 520 to 560 nm. In this way, the phosphor is more suitable for different chips.
基金
ProjectsupportedbytheNationalNaturalScienceFoundationofChina ( 5 0 2 0 40 0 2,5 0 3 72 0 86)andtheNationalHi TechR&DProgramofChina ( 863Program,2 0 0 1AA3 13 14 0 )
