MeV P^+/Si^+共注入SI-GaAs制备高品质n^+埋层

MEV P^+/Si^+ CO-IMPLANTATION TO CREATE HIGH QUALITY n^+ LAYER IN SI- GaAs

采用不同注量和注入顺序的MeV能量的P^+(3MeV,1×10^(14)～3×10^(14)cm^(-2))与MeV能量的Si^+(3MeV,1×10^(14)cm^(-2))共注入于SI-LEC GaAs晶体中。对不同退火条件的共注入样品的有源层电特性、载流子浓度分布、晶格的损伤和恢复状况以及剩余缺陷等进行了分析。研究表明,较大注量的P^+与Si^+共注入,可以降低注区薄层电阻,有效地提高MeV Si^+的激活效率,改善有源层迁移率,得到高品质的n^+埋层。共注入样品的HALL迁移率大于2400cm^2/(V·s),激活率可达95％以上。

MeV P^+/Si^+ co-implantation has been achieved in semi-insulating GaAs. The annealing behavior of the specimens and related activation mechanism are discussed in terms of electrical properties, carrier profile, damage removal and residual dislocation loops in the implanted region. The measurements show that with the help of high dose P^+ ion co-implantation, there comes a better donor activation rate of 95%, a lower sheet resistance of 25Ω and a higher mobility of 2400 cm^2/(V·s), thus creating a high quality n^+ conductive layer in SI-GaAs substrate.