摘要
用化学气相沉积法制备非晶硅薄膜,测量了样品的光吸收系数及其波长区域范围。测得在最佳工艺条件下,非晶硅薄膜的光吸收系数随入射光波长增大而减小,随衬底温度升高而增大,随射频功率和反应气体流量的增大而减小,在700nm附近的光吸收系数不低于1×103cm-1,满足高性能液晶光阀对光电导层的性能要求。
The hydrogenated amorphous silicon (a-Si) films were deposited by plasma enhanced chemical vapor deposition technique. The light absorption coefficients and their wavelength width of the a-Si films were measured. The results show that the light absorption coefficient of the a-Si film increased as the temperature of bed plate increased, and decreased as the RF power and gas flowing rate increased. The films with the absorption coefficient no less than 1×10~3 cm^(-1) at the wavelength of about 700 nm were obtained, which meets the technical requirements of a high quality liquid crystal light valve.
出处
《真空电子技术》
2004年第2期20-22,共3页
Vacuum Electronics
关键词
非晶硅
光吸收系数
波长范围
Hydrogenated amorphous silicon
Light absorption coefficient
Wavelength width
