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通信和信息技术用电子陶瓷材料的研究进展

Progress and Trend of the Electroceramic Materials for Communication and Information Technologies
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摘要 电子陶瓷材料研究受技术和器件应用的驱动。在工业过程控制、保健、消费电子品和环境监测等方面得到广泛应用。该文着重讨论了近年来通信和信息技术领域中电子陶瓷材料的研究情况及发展趋势。 Research and development in the field of electroceramics is driven by technology and device applications. It includes research on a broad spectrum of inorganic materials, and it covers all scales from the level of the crystalline lattice to that of final devices. The applications find a place in an increasing number of domains, ranging from environment monitoring and transportation, through medicine and health-care, to electronics and communications. The progress and trend of the electroceramic materials for communication and information technologies were introduced in this paper.
出处 《压电与声光》 CAS CSCD 北大核心 2004年第3期209-213,共5页 Piezoelectrics & Acoustooptics
基金 湖北省自然科学基金资助项目(2001ABB017)。
关键词 电子陶瓷材料 通信 信息技术 微电子器件 electroceramic materials communication information technologies microelectronic devices
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  • 1MELNICK B, CUCHIRO J, MCMILLIAN L, et al. Process optimization and characterization of device worthy Sol-Gel based PZT for ferroelectric memories [J]. Ferroelectrics, 1990, 112(1-3): 329-351.
  • 2SOMMERFELT S R. In: Thin Film Ferroelectric Materials and Devices [M]. R Ramesh Kluwer Academic Publishers, 1997.
  • 3YOSHIDA M, YABUTA H, YAMAGOUCHI S, et al. Plasma CVD of (Ba, Sr)TiO3 dielectrics for Gigabit DRAM capacitors [J]. J electroceramics, 1999, 3(1): 123-133.
  • 4SCOTT J F, PAZ de Araujo C A [J].Ferroelectric memories Science, 1989, 246(12): 1 400-1 405.
  • 5STOLICHNOV I, TAGANTSEV A, SETTER N, et al. Top-interface-controlled switching and fatigue endurance of (Pb,La)(Zr,Ti)O3 ferroelectric capacitors [J]. Appl Phys Letters, 1999, 74(9): 3 552-3 554.
  • 6TAGANTSEV A K, STOLICHNOV I A. Injection-controlled size effect on switching of ferroelectric thin films [J]. Appl Phys Letters, 1999, 74: 1 326-1 328.
  • 7JONES R E Jr, DESU S B. Process integration for nonvolatile ferroelectric memory fabrication [J]. MRS Bull, 1996, 21(6): 55-63.
  • 8ISHIWARA H.Current stutus and prospects of FET-type ferroelectric memories [J].Future Electron Devices, 2000, 11(1): 27-40.
  • 9DIMOS D, MUELLER C H. Perovskite thin films for highfrequency capacitor applications [J]. Annual Rev Mater Sci, 1998, 28: 397-419.
  • 10NOMA A, UEDA D. Reliability study on BST capacitors for GaAs MMIC [J]. Integ Ferroel, 1997, 15(1): 69-78.

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