LaNiO_3薄膜热稳定性的研究

A Study on the Thermo-stability of LaNiO_3 Films

LaNiO3导电金属氧化物薄膜在现代应用科学研究中作为电极和过渡阻挡层倍受青睐,它具有很好的导电特性和稳定性。该文采用射频溅射法制备了具有(100)择优取向的赝立方结构LaNiO3-x薄膜,并进行了原位热处理。实验结果表明,在265°C的处理条件下,LaNiO3薄膜表现出不稳定性,晶格中的氧在2h内失去了2.7%。氧的损失对晶格结构没有明显影响,但薄膜的导电性能明显下降,折射率和消光系数也具有相同幅度的下降。对薄膜的应用具有一定的影响。该文从LaNiO3薄膜的导电机理方面对实验现象给出了分析和解释。

There has been great interest in the conducting metal oxide LaNiO_3 films, which are widely utilized as electrode and buffer layers. In most studies, they are taken granted as being of good physical and chemical stabilities. However, in this study, thin LaNiO_(3-x) films with pseudo-cubic (100) preferred orientation were prepared by RF magnetron sputtering, and were in situ annealed. Results show that the LaNiO_3 films were not stable after annealing at temperature of 265 °C. Oxygen concentration in lattice decreased 2.7% after 2 hours annealing. The oxygen loss did not affected the structure of films. Their electric conductivities, optical refractive indexes and extinction coefficients were decreasing obviously as annealing time increased. Meanwhile, an explanation for our results also is provided according to the conduction mechanism of LaNiO_3 films.