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1.55μm AlGaInAs-InP偏振无关半导体光放大器及其温度特性研究

Study on 1.55μm AlGaInAs-InP polarization-insensitive semiconductor optical amplifier and its temperature characterizatics
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摘要 采用低压金属有机气相外延 (LP MOCVD)设备生长并制作了 1 5 5 μmAlGaInAs InP偏振无关半导体光放大器 ,有源区为 3周期的张应变量子阱结构 ,应变量为 0 35 % ;器件制作成脊型波导结构 ,并采用 7°斜腔结构以有效抑制腔面反射 ;经蒸镀减反膜后 ,半导体光放大器的自发辐射功率的波动小于 0 3dB ,3dB带宽为 5 0nm ,半导体光放大器小信号增益近 2 0dB ,带宽亦为 5 0nm .在 1 5 30— 1 5 80nm波长范围内偏振灵敏度小于 0 5dB ,峰值增益波长的饱和输出功率达 7dBm ;器件增益随温度的升高而减小 ,当器件工作温度从 2 5℃升高至 6 5℃时 ,增益降低小于 3dB . Polarization insensitive AlGaInAs InP semiconductor optical amplifier is realized at wavelength of 1 55 μm. The active layer consists of three tensile strained wells with a strain of 0 35%. The amplifier is fabricated with a ridge waveguide structure. The testing result shows that the amplifiers have an excellent polarization insensitivity (less than 0 5 dB) over the entire range of wavelength (from 1530 to 1580nm). The 1540 nm wavelength optical gain is 20 dB at the bias current of 200 mA. The AlGaInAs InP optical amplifier shows good temperature characteristics, less than a 3dB reduction in the gain and polarization insensitivity when the temperature is raised from 25℃ to 65℃.
出处 《物理学报》 SCIE EI CAS CSCD 北大核心 2004年第6期1868-1872,共5页 Acta Physica Sinica
关键词 半导体材料 低压金属有机气相外延技术 应变量子阱 半导体光放大器 增益 semiconductor technology, MOCVD, polarization-insensitive, AlGaInAs-InP, strained quantum well, semiconductor optical amplifier, gain
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参考文献14

  • 1Diez S, Ludwig R and Weber H G 1999 IEEE Photon. Technol.Lett. 11 60
  • 2Geraghty D F et al 1997 IEEE Photon. Technol. Lett. 9 452
  • 3Zhang X L, Huang D X, Sun J Q and Liu D M 2001 Chin. Phys.10 124
  • 4Simoyama T et al 2000 IEEE Photon. Technol. Lett. 12 31
  • 5Akiyama T et al 2002 Electron. Lett. 38 239
  • 6Joma M et al 1993 Appl. Phys. Lett. 62 121
  • 7Ougazzaden A et al 1995 Electron. Lett. 31 1242
  • 8Mathur A and Dapkus P D 1992 Appl. Phys. Lett. 61 2845
  • 9Koonath P et al 2002 IEEE J. Quantum Electron. 38 1282
  • 10Takemasa K et al 1998 IEEE Photon. Tech. Lett. 10495

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