摘要
本文总结了近年来半导体InN薄膜材料(主要是六方纤锌矿结构的InN及异质结构)的电学性质研究进展,重点内容为InN的载流子浓度和迁移率,造成InN中高电子浓度现象的施主分析、载流子输运特性及表面、界面特性等。同时也涉及了部分立方闪锌矿结构InN的电学特性和InN在器件(主要是高电子迁移率晶体管器件)上的潜在应用。
We review the recent studies on the electrical properties of novel semiconductor InN thin films. Most of the experimental results are concerned with the studies on the hexagonal InN thin films and their heterostructures. The emphasis is on the carrier concentration and mobility, the background donor_induced high electron concentration, carrier transport characteristics, surface charge accumulation and interface characteristics. This article also discusses the electrical properties of zinc blende structure InN thin films and presents the potential application of InN thin films for devices(mainly for high electron mobility transistors).
出处
《物理学进展》
CSCD
北大核心
2004年第2期195-215,共21页
Progress In Physics
基金
国家杰出青年基金(NSFC10125416)
教育部高等学校优秀青年教师教学科研奖励计划
关键词
氮化铟
半导体材料
载流子浓度
迁移率
薄膜材料
InN
electrical properties
carrier concentration
review
mobility and carrier transport
