Ge/Si(001)量子点组分的掠入射X射线反常衍射测量

Composition in Ge/Si(001) quantum dots directly measured by grazing incidence X-ray anomalous scattering/diffraction

利用掠入射X射线反常散射/衍射实验技术对Si(001)上生长的单层和双层Ge量子点的组分分布进行了直接测量;;结果显示;;在Si间隔层厚度为90nm时得到的双层Ge量子点与单层Ge量子点的组分及其分布特征是几乎相同的。

The composition in the free-standing and bilayer Ge quantum dots grown on Si( 001 ) substrate was directly determined by grazing incident X-ray anomalous scattering/diffraction ( GIXASD ) . The composition and its variation in the bilayer quantum dots separated by a 90nm thick Si spacer are similar to those of the free-standing quantum dots.