摘要
文中主要研究了 12 0keV的N+ 注入后SiC薄膜样品的光致发光谱 (PL)和傅立叶红外光谱(FTIR)特性 .从红外光谱可以看到有明显得碳氮单键、双键、三键等新结构生成 .从PL光谱则发现 36 5nm处的发光峰明显增强 ,这表明N+
SiC films were deposited on Si substrates by RF co-sputtering of the Si and C compound target and implanted by 120keV N ions. The structure, optical property of thin films were studied by Fourier transform infrared spectrum(FTIR) and photoluminescence(PL) spectroscopy. The obtained results suggested that carbon nitride single, double and triple bonds are formed in the N ions implanted SiC films, and the luminescence intensity depends strongly on the quantity of N ions.
出处
《高能物理与核物理》
CSCD
北大核心
2004年第6期626-628,共3页
High Energy Physics and Nuclear Physics
基金
国家自然科学基金 ( 10 12 5 5 2 2 )
中国科学院西部之光基金资助~~
