MO-PECVD SnO_2气敏薄膜的制备及表征

Preparation and characterization of SnO_2 gas sensitive thin film by MO-PECVD

目的 探索制备SnO2薄膜的最佳工艺,研究氧分压与其薄膜元件气敏性能间的关系。方法以金属有机化合物(MO)四甲基锡[Sn(CH3)4]为源物质,采用等离子体增强化学气相沉积技术(PECVD)。利用X射线衍射仪和扫描电镜(SEM)对薄膜的晶体结构、SnO2晶体的颗粒度进行了表征,对不同样品的气敏性能做了测试分析。结果 优化出制备SnO2薄膜的最佳工艺。结论 氧分压是影响SnO2颗粒尺寸大小及薄膜元件气敏性能的重要因素。

AimThe perfectly technical data are explored so as to gain fine SnO_2 gas sensitive thin films.MethodsFine SnO_2 gas sensitive thin films on the crystal silicon and glass are prepared by MO-PECVD process,in which metal-organic compound Sn(CH_3)4are used as a source material. The crystal structure of SnO_2 gas sensitive thin films and granularity are analyzed by X-ray diffraction (XRD) and scanning electron microscopy (SEM). And the gas sensitive character of different thin film element are researched in detail.ResultsThe optimum condition for technics is gained.ConclusionThe mass flux proportion of oxygen is important factor which has direct effect on the quality of thin films and the gas sensitive character.