TiO_2压敏陶瓷晶粒半导化

SEMICONDUCTORIZATION OF THE GRAINS IN TiO_2 CERAMIC

本文主要研究 TiO_2陶瓷晶粒半导化的途径及晶粒电阻率的测试方法。实验结果表明,通过掺入Nb_2O_5施主杂质可以有效地降低晶粒电阻率,并使 TiO_2系陶瓷具有良好的压敏特性。

Donor doping was used to make the grains semiconductive for a TiO_2 ceramic.The resistivity of the grains was measured by means of strong current pulse method and highfrequency equivalent circuit method.The results show that Nb_2O_5 doping can considerably re-duce the resistivity of TiO_2 grains,which is in the range of 0.6- 5.0Ωcm.The Nb_2O_5-dopedTiO_2 ceramic exists an excellent non-linearity in the voltage-current relationship with lowthreshold voltage,low leakage current and large non-linear coefficient.