摘要
采用静滴法、电子探针和扫描电镜研究了 Cu-Sn-M(M=Ti,Zr,V,Cr)三元合金与烧结碳化硅及单晶碳化硅间的润湿性及界面反应。在 Cu-Sn-Ti 合金与两种碳化硅垫片的铺展前沿均发现有前驱膜存在,同时在 Cu_(85)Sn_(10)Ti_5与烧结碳化硅的界面发现裂纹。实验结果表明:Ti 的加入显著改善 Cu-Sn 二元合金与碳化硅间的润湿性,其原因是 Ti 在界面上的吸附、富集及界面反应。
The wettability and the interfacial reaction between molten ternary alloysCu-Sn-M(M=Ti,Zr,V,Cr)and various type of silicon carbide,such as sintered SiC and sin-gle crystal α-SiC,were investigated by the sessile drop method,EPMA and SEM.It was discov-ered that a precursor film on the edge between alloy's drop and the substrate was spread gradu-ally,meanwhile,a crack was formed at the cross-section of Cu_(85)Sn_(10)Ti_5/sintered SiC.The ex-perimental results showed that the addition of Ti to binary alloy Cu-Sn could remarkably im-prove the wettability of Cu-Sn alloy on the SiC substrate due to the adhension and accumula-tion of Ti as well as interaction on the interface.
关键词
铜基合金
碳化硅
润湿性
界面反应
copper alloy
SiC
wettability
interfacial reaction
precursor film
