MCZ硅单晶反型杂质含量研究

Research on Inversion Impurity Concentration in MCI Silicon Single Crystal

利用范德堡-霍尔测量方法对MCZ硅单晶和CZ硅单晶的反型杂质含量进行了对比测量。所得结果表明,MCZ硅单晶的反型杂质含量低于CZ硅单晶约半个数量级之多。文中还提出了一种适合于大批量范德堡-霍尔测量的接触电极制备方法—选择扩散法,并给出了确保不会给范德堡测量方法带来影响的扩散结深与样品厚度比值上限x_j/d=0.01。测量过程中应用了有限尺寸接触电极修正理论。

The inverse impurity concentration in MCZ-Si and CZ-Si are measured and compared with each other by using Van Der Pauw Hall method. The results show that the inversion impurity concentration in MCZ-Si is less than that in CZ-Si as far as half magnitude. The choice diffussion method, a preparation method to produce contact electrodcs which is fit for large quantity Van Der Pauw measurement is also given, the maxium ratio of diffusion jection depth to sample thickness is X_j/D=0.01, so as not to affect Van Der Pauw measurement. In the measurement, the finite size contact modification technology is applied.