摘要
介绍了CMOS运算放大器电路经电离辐照后 ,在不同偏置及不同退火温度下 ,运放整体性能参数、电路内部单管特性及功能单元电路的节点电流、电压的变化规律 ,分析了引起运放辐照后继续损伤退化的基本原因 .结果显示 ,运放电路辐照后的退火行为与偏置及温度均有较大的依赖关系 ,而这种关系与辐照感生的氧化物电荷和Si/SiO2
The behavior of the CMOS op-amps exposed to the ionizing radiation and annealing characteristic after irradiation in different biases and temperature are described.The tested characteristics include all electrical parameters of op-amps and inner transistor,and the current and voltage of the nodes of the subsidiary circuits.The change of radiation-induced oxide trapped charge and Si/SiO 2 interface state density depends on the annealing biases and temperature in quite extent.
