半导体激光治疗羟基磷灰石义眼座暴露

Semiconductor low level laser irradiation for exposure of hydroxyapatite orbital implants

目的 探讨低功率半导体激光治疗羟基磷灰石义眼座暴露的疗效。方法 采用JAM Ⅱ型多功能半导体激光治疗仪对 2 2例不同程度的义眼座暴露患者进行激光照射治疗 ,并将结果与既往采用药物及手术治疗的 2 0例义眼座暴露患者对照比较。结果 激光组 2 2例全部愈合(10 0 % ) ;药物及手术组中轻、中、重度的愈合率分别为 83 3%、6 3 6 %和 0。经采用卡方检验之四格表精确检验法处理 ,两组间轻度患者的愈合率差异无显著性意义 (P =0 5 4 5 ) ,而两组间中度和重度患者的愈合率差异有显著性意义 (P =0 0 19,0 0 18)。结论 低功率半导体激光治疗羟基磷灰石义眼座暴露的疗效优于药物及手术方法。也可用于预防义眼座暴露。

Objective To evaluate the efficacy of semiconductor low level laser irradiation for the treatment of postoperative exposure of hydroxyapatite orbital implants. Methods 22 cases with postoperative exposure of hydroxyapatite orbital implants were divided into three groups according to the size of implants exposure. The exposure wound in the 3 groups was irradated with semiconductor low level laser 5 min per day for 5～15 days. The follow -up period ranged from 2 to 24 months. Results In the group with less then 3 mm of exposure, the wound healed in 1 week after 5～10 days irradiation;in the group with implant exposure of 4～7 mm,the would healed in 1～2 weeks after 10～15 days irradiation;in the group with implant exposure of 8～10 mm,the would healed in 2～3 weeks after 10～15 days irradiation. Compared with the treatments of drugs and/or surgical repair,which was used for another 20 cases of exposure of hydroxyapatite orbital implants,semiconductor low level laser increased healing rate obviously in the groups with implant exposure of 4～7 mm and 8～10 mm ( P =0 ^019,0.018). Conclusion Semiconductor low level laser has better effects than drugs and/or surgical repair for exposure of hydroxyapatite orbital implants. ;