RF模型综述

An Overview of MOSFET Modeling for RF IC's

文章主要讨论了RF模型的现状和应用前景。首先说明了RF模型的一般要求,然后对其中的核心问题和目前关注的焦点进行了分析,如寄生元件尤其是栅电阻和衬底电阻网络的建模、非准静态效应的建模和高频噪声的建模等。同时,还简单介绍了目前通用的简单模型。最后,提出了改进RF模型的方向和策略。

The current status and future development of MOSFET modeling for RF circuit design are described. General requirements for RF compact models are presented, and some key problems of the RF model are discussed, including the modeling of gate resistor and substrate resistor network, and modeling of non-quasi-static effects and high-frequency noise. Some popular compact models, as well as their performances, in RF region are introduced. Finally, some research strategies for improvement of RF models are proposed.