SiGe薄膜材料电阻率与掺杂浓度的关系研究

A Study on the Relation Between Resistivity and Doping Concentration of Si_(1-X)Ge_X Films

目前,应变Si1-xGex薄膜材料杂质浓度尚未有准确且简便易行的测试方法。为了快速准确地确定应变Si1-xGex薄膜材料的掺杂浓度,在研究应变Si1-xGex材料多子迁移率模型的基础上,采用Matlab编程模拟仿真,求解并建立了不同Ge组分下应变Si1-xGex薄膜材料掺杂浓度与其电阻率的关系曲线,讨论了轻、重掺杂两种情况下该关系曲线的变化趋势。通过Si1-xGex薄膜材料样品的四探针电阻率测试及电化学C-V掺杂浓度测试的对比实验,对本关系曲线进行了验证。

Based on a new majority carrier mobility model of the strained Si_(1-x)Ge_x film material, the relation curve between the resistivity and the doping concentration of Si_(1-x)Ge_x film material for different Ge content has been obtained by Matlab simulation. With this relationship, the doping concentration in strained Si_(1-x)Ge_x film material can be measured by using a collinear four-probe array. The relation curve is demonstrated by using the resistivity and the C-V doping concentration test of Si_(1-x)Ge_x film material.