摘要
文章介绍了一种精确的小角度测量方法的原理及其应用装置。通过实验对比,验证了该方法的准确性(精度可达2%)。将该方法及装置应用于硅材料纵向杂质分布的扩展电阻测试[1-3],可大大提高浅结结深测量的准确度。
A special apparatus for small-angle measurement, which is capable of measuring angles less than 1°, is presented in the paper. Its principle of operation is described. Experiments show that the accuracy with this method reaches 2%. When used for measuring the spreading resistance of the longitudinal impurity profile in a silicon wafer, it can greatly improve the precision in measuring the depth of shallow junctions.
出处
《微电子学》
CAS
CSCD
北大核心
2004年第3期278-280,共3页
Microelectronics
关键词
小角度测量
扩展电阻测试
硅片表征
旋转角
磨角
Small angle measurement (SAM)
Spreading resistance
Si-wafer characterization
Rotation angle
Bevel angle
