摘要
采用紫外光能量辅助化学气相淀积(UVCVD)方法,同时结合超高真空化学气相淀积(UHVCVD)及超低压化学气相淀积(ULPCVD)技术,在450℃低温外延生长了应变SiGe/Si材料。讨论了应变SiGe材料的结晶性及生长速率与生长温度和Ge组分的关系,给出了应变SiGe材料的X射线衍射分析结果。
This paper introduces the SiGe/Si epitaxial growth at 450℃ by UVCVD together with UHVCVD and ULPCVD techniques. The effects of the three techniques in SiGe epitaxial growth are discussed. Also discussed is the relationship of the growth rate to the growth temperature and the Ge content. The analysis result of the x-ray diffraction of SiGe epitaxial material is presented.
出处
《电子科技》
2004年第4期8-10,共3页
Electronic Science and Technology
基金
模拟集成电路国家重点实验室基金资助项目 (99JS09.3.1DZ0111
51439010101DZ0101)
