SiGe CMOS结构与模拟分析

A study of simulation and an analysis of a SiGe CMOS structure

提出了一种新的SiGeCMOS结构,应用MEDICI软件对该结构CMOS器件的主要电学参数与其几何结构和物理结构参数的关系进行了模拟分析.根据模拟结果,讨论分析了应变SiGe层、弛豫SiGe层中Ge组分及Si"帽"层厚度等结构参数对SiGeCMOS电学性能的影响,给出了该结构的几何结构和物理结构参数.同时模拟了SiGeCMOS倒相器的传输特性.

A novel SiGe CMOS structure is proposed. MEDICI was used to simulate the relations between the electrical parameters of the SiGe CMOS structure and its geometrical and physical parameters. According to the results of the MEDICI simulation, the effects of the main factors which include Ge contents in the strained and relaxed SiGe layes, and the thickness of Si cap layer on the electrical performance of the SiGe CMOS structure are discussed and analyzed. The transport performance of a SiGe CMOS inverter is simulated with MEDICI and the delay time is 3ps.