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GaN基微波半导体器件研究进展 被引量：4

Research progress of GaN-based microwave devices
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摘要 GaN基微波器件以其优良的特性而在微波大功率方面具有应用潜力.对GaN半导体材料作了比较和讨论,说明了GaN材料在微波大功率应用方面的优势,并阐述了新型GaN基微波器件的最新进展,通过与其他微波器件的比较表明了GaN调制掺杂场效应晶体管在微波大功率应用方面所具有的明显优势. GaN-based microwave devices possess potential in microwave and high power applications, and related researches have been a hotspot in the current compound semiconductor area. A comparison and discussion of GaN's show its great advantages in microwave and high power application. The newest development of several GaN-based microwave devices is also introduced. The advantage of GaN Modulation Doped Field Effect Transistors(MODFETs) in microwave and high power applications is compared with that of other microwave devices finally.
作者 杨燕 郝跃 张进城 李培咸
机构地区 西安电子科技大学微电子研究所
出处 《西安电子科技大学学报》 EI CAS CSCD 北大核心 2004年第3期367-372,421,共7页 Journal of Xidian University
基金 国家重大基础研究(973)项目 国家部委预研资助项目(41308060106)
关键词 GAN 微波大功率 调制掺杂场效应晶体管 GaN microwave and high power modulation doped field effect transistors
分类号 TN304 [电子电信—物理电子学]
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参考文献19

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二级参考文献4

共引文献17

同被引文献20

  • 1王冲,郝跃,张进城.AlGaN/GaN HEMT研制及特性分析[J].西安电子科技大学学报,2005,32(2):234-236. 被引量：7
  • 2刘中其,唐喆.混合集成电路常见装配结构热阻分析[J].微电子学,2006,36(6):697-701. 被引量：6
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引证文献4

二级引证文献3

西安电子科技大学学报
2004年 第3期

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