ZnO薄膜的射频磁控溅射法制备及特性

Preparation of ZnO thin films by RF magnetron sputtering and their properties

利用射频磁控溅射镀膜工艺,在石英玻璃衬底上成功制备了ZnO薄膜.采用原子力显微镜、X射线衍射、拉曼光谱、荧光分光光度计及椭偏等检测手段对其特性进行了测试、分析.研究结果表明:该薄膜具有良好的C轴取向结晶度;最佳激发波长为265 00nm,光致发光峰分别位于362 00、421 06和486 06nm;437cm-1是ZnO晶体的特征拉曼峰,该峰的出现与最强的X射线衍射(002)峰相对应;薄膜折射率为2 01.

ZnO thin films with prominent c-orientation are successfully fabricated by RF magnetron sputtering on silica glass substrate at room temperature. Atomic Force Microscope(AFM), X-ray Diffraction, Raman spectrum, Fluorescence Spectrophotometer, Ellipsometer, etc. are adopted in studying their properties. The results show that the As-grown thin films exhibit excellent C axis orientation even without annealing treatment; the optimal excitation wavelength locates about 265.00 nm, emission peak wavelength locates 362.00 nm, 421.06 nm, 486.06 nm, respectively; their refractive index is about 2.01.