Zn_2SiO_4∶Ga蓝紫色长余辉的发光特性

Blue-purple long afterglow luminescence property of Zn_2SiO_4∶Ga

在高温下合成了Zn2SiO4长余辉发光材料;对掺杂Ga后的Zn2SiO4长余辉发光材料的激发光谱、发射光谱、余辉光谱以及衰减曲线进行分析,指出该材料基质中氧缺陷能级和锌缺陷能级是材料的发光中心;掺杂Ga后的GaZn能级能吸收光子,同时能储存电子,停止激发后,储存的电子缓慢释放,从而产生长余辉发光;同时分析了不同Ga掺杂质量分数对发光强度的影响,指出掺杂质量分数为2%时的发光效果最好;并提出了一个材料发光及长余辉发光模型.

Zn_2SiO_4 were prepared by the high temperature solid state method. From the emission spectra, excitation spectra and long phosphorescent spectra of Zn_2SiO_4 and Zn_2SiO_4∶0.02 Ga, we can see that luminescence of Zn_2SiO_4∶0.02 Ga originates in oxygen vacancy and zinc vacancy. Electron can be absorbed in GaZn and be deposited for a while, then slowly move into F^+ center, transfer to zinc vacancy, so afterglow luminescence happens. When different concentration Ga were doped, the luminescence effective with 2% Ga is best. We propose a mode of afterglow mechanism.