摘要
超导技术是开发新能源的重要技术之一。超导缓冲层是超导薄膜的重要组成部分。以有机镁[Mg(thd)_2]为起始物,采用等离子强化化学气相沉积(PECVD)工艺,在玻璃、石英、不锈钢和镍衬底上制备了超导缓冲层MgO薄膜,当衬底温度≥400℃时,MgO薄膜为单一(100)晶向,具有理想的表面织构。研究了实验参数,包括射频功率和自偏压对沉积速率和薄膜性能的影响。
Superconductor buffer layer MgO thin films have been deposited on glass, quartz, stainless steel and nickel by plasma enhanced chemical vapor deposition using organic magnesium (Mg(thd)2) as precursor. The films show (100) orientation when deposited at temperatures≥400℃. The influence of experimental parameters including rf-power and self-bias on deposition rate and film properties have been studied.
出处
《太阳能学报》
EI
CAS
CSCD
北大核心
1993年第3期233-238,共6页
Acta Energiae Solaris Sinica
关键词
等离子强化化学气相沉积
超导缓冲层
氧化镁薄膜
超导技术
plasma enhanced chemical vapor depositition (PECVD), superconductor buffer layer, MgO thin films
