期刊文献+

碲化铋基薄膜热电性能的研究 被引量:1

Study on the Thermoelectric Properties of Bi<sub>2</sub>Te<sub>3</sub>-Based Thin Films
下载PDF
导出
摘要 热电材料能实现热能与电能间的相互转化,有很大的应用价值。碲化铋是研究最早、应用最广的热电材料。本实验采用了磁控溅射的方法,以不同的溅射功率与溅射时间在玻璃基板上得到了6片碲化铋热电薄膜。实验测定了6片薄膜的Seebeck系数与膜厚,观察了其表面形貌,并统一进行了热处理,且在热处理后重新测定了Seebeck系数、XRD图谱,并记录了表面形貌。结果表明,热处理后,薄膜的结晶程度与Seebeck系数均显著提升,总体的热电性能有了大幅提高。其中,在80 W的溅射功率下溅射10至25分钟,可以得到热电性能较好的碲化铋薄膜,有较大的功率因子。 Thermoelectric materials can realize the mutual conversion between thermal energy and electric energy, which has great application value. Bismuth telluride (Bi2Te3) is the earliest research and most widely used thermoelectric material. In this paper, the magnetron sputtering method is used to obtain 6 pieces of Bi2Te3 thermoelectric film on the glass substrate with different sputtering power and sputtering time. The Seebeck coefficient and film thickness of 6 films were measured experimentally, the surface morphology was observed, and the heat treatment was performed uniformly. After the heat treatment, the Seebeck coefficient and XRD pattern were re-determined, and the surface morphology was recorded. The results show that after heat treatment, the crystallinity and Seebeck coefficient of the film are significantly improved, and the overall thermoelectric performance is greatly improved. Among them, by sputtering under 80W sputtering power for 10 to 25 minutes, a bismuth telluride film with better thermoelectric properties can be obtained, and a higher power factor can be obtained.
出处 《材料化学前沿》 2021年第2期59-65,共7页 Advances in Material Chemistry
  • 相关文献

参考文献2

二级参考文献34

  • 1黄志勇,吴知非,周世新,郑文波.温差发电器及其在航天与核电领域的应用[J].原子能科学技术,2004,38(z1):42-47. 被引量:23
  • 2李洪林,苟立,冉均国.纳米Bi_2Te_3基热电材料最新研究进展[J].现代技术陶瓷,2005,26(2):16-20. 被引量:6
  • 3单扬文,黄琥,栾伟玲.Bi-Te基热电材料的能带结构计算[J].能源技术,2007,28(1):1-3. 被引量:5
  • 4李玲玲,张丽鹏,于先进.热电材料的研究进展[J].山东陶瓷,2007,30(2):19-22. 被引量:8
  • 5MAGRI P, BOULANGER C, LECUIRE J M. Synthesis, properties and performances of electrodeposited bismuth telluride films [J]. J Mater Chem, 1996 (6) : 773 -779.
  • 6BAILINI A, DONATI F, ZAMBONI M, et al. Pulsed laser deposition of Bi2Te3 thermoelectric films [J]. Applied Surface Science, 2007, 254 (4) : 1249 - 1254.
  • 7BEYER H, NURNUS J, BAUER G, et al. High thermoelectric figure of merit ZT in PbTe and Bi2 Te3- baded superlattiees by a reduction of the thermal conductivity [J]. Physica: E, 2002, 13 ( 2/3/4 ) : 965 - 968.
  • 8BOULOUZ A, GIANI A, BOULOUZ M, et al. Preparation and characterization of MOCVD bismuth telluride thin films [J]. Journal of Growth, 1998, 194 (34): 336 -341.
  • 9ZOU H L, ROWE D M, GAO M. Growth of p- and n- type bismuth telluride thin films by co-evaporation [J].Journal of Crystal Growthm2001,22(1/2):82-87.
  • 10DUAN X K, JIANG Y Z. Annealing effects on the structural and electrical transport properties of n-type Bi2Te3.7 Se0.3 thin films deposited by flash evaporation [J]. Applied Surface Science, 2010, 256 (24): 7365 - 7370.

共引文献15

同被引文献8

引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部