电子束沉积技术制备SnSe薄膜的研究

Research on SnSe Thin Films Prepared by Electron Beam Deposition Technique

硒化锡(SnSe)是一种典型的二维半导体材料,由于其优异的电学和光学性能,在新型光电子学领域引起了广泛的关注。本文采用电子束沉积技术在钠钙玻璃衬底上成功地制备出SnSe薄膜,并利用表征设备进行相关测试研究。通过温度处理,研究不同温度(25℃、100℃、150℃、200℃、250℃)对所得薄膜物相与组分、表面形貌、透过率及吸收率等性能的影响。研究表明,随着温度的升高,SnSe对应的峰强度降低,同时出现了SnSe2和SnO2的峰。此外,在200℃时SnO的初始形成并逐渐转化为SnO2,SnO峰的强度在250℃时彻底消失。SnSe薄膜的吸收率随温度的升高而降低,在可见光范围内薄膜吸收率最大可达1.4%,在900~1400 nm波段范围内五组薄膜样品的吸收率均在1.2%以下。薄膜的透过率则随着温度的升高而增大,且在近红外区域具有较高的透过率,所有样品在可见光波段内透过率均保持在25%以下。

Tin selenide (SnSe) is a typical two-dimensional semiconductor material, which has attracted extensive attention in the field of new optoelectronics due to its excellent electrical and optical properties. In this paper, SnSe thin films were successfully prepared on soda-lime glass substrates by electron beam deposition technology, and related tests were carried out using characterization equipment. The effects of different temperatures (25˚C, 100˚C, 150˚C, 200˚C, 250˚C) on the phase and composition, surface morphology, transmittance and absorption rate of the obtained films were studied by temperature treatment. The results show that the peak intensity of SnSe decreases with the increase of temperature, and the peaks of SnSe2 and SnO2 appear at the same time. In addition, SnO was initially formed and gradually transformed into SnO2 at 200˚C, and the intensity of the SnO peak completely disappeared at 250˚C. The absorptivity of SnSe thin films decreases with the increase of temperature, and the maximum absorptivity of 1.4% is obtained in the visible light range. The absorptivity of the five groups of thin film samples is below 1.2% in the range of 900~1400 nm. The transmittance of the film increases with the increase of temperature, and has a high transmittance in the near-infrared region. The transmittance of all samples in the visible light band remains below 25%.