PLD制备Mn掺杂ZnO薄膜的光学性能和快速红外光伏响应研究

Fast Infrared Photovoltaic Responses of Mn Doped ZnO Thin Films Synthesized by PLD Method

使用脉冲激光沉积(PLD)方法在融石英基底上生长不同Mn掺杂量的ZnO薄膜。XRD测试表明,Mn掺杂的ZnO薄膜为六方纤锌矿结构,具有明显的(002)方向择优生长,Mn2+以取代原子的形式存在于ZnO薄膜中,Mn2+掺入后导致了晶格膨胀。薄膜吸收光谱的测试显示出Mn的掺杂改变了ZnO薄膜的禁带宽度,从而改变了ZnO薄膜对光的吸收能力。薄膜具有快速响应的红外光伏效应,其红外光伏信号随激光能量的增加而线性增大,随Mn掺杂量的增多也增大。

ZnO thin films with different Mn doping amounts were prepared on fused quartz substrate by pulsed laser deposition (PLD) method. XRD test showed that the Mn doped ZnO films were hexagonal wurtzite and had mainly (002) peaks. Mn2+ was a substitution of Zn2+ in the films, which led to lattice expansion. Absorption spectrum revealed that Mn doping changed the band gap of the films, and furthermore changed the absorption ability of the ZnO films. The films also had fast infrared photovoltaic responses, which increased with the increase of the laser energy and the Mn content.