介质厚度不同对碳纳米管场效应晶体管的影响

The Influence of Different Gate Oxide Thickness on Carbon Nanotube Transistors

本文运用非平衡格林函数理论,计算碳纳米管场效应晶体管栅极氧化层中由一个缺陷电荷引起的无规则电报信号杂音。文章模拟计算了该杂音强弱与栅极氧化层厚度的依赖关系,研究单层和复合绝缘层两种不同情况下碳纳米管场效应晶体管中的无规则电报信号杂音。

In this thesis, non-equilibrium Green function theory is applied to calculate random-telegraph-signal (RTS) noises caused by a single defect in gate oxide of carbon nanotube field-effect (CNFET) transistors. We investigate systematically how RTS noises depend on gate oxide thickness and discuss the RTS noises with two different situations: a single layer and a composite layer.