激光锡等离子体极紫外光谱的优化研究

Research on Optimization of Extreme Ultraviolet Spectrum from Laser-Produced Tin Plasma

激光等离子体EUV光源对于集成电路纳米尺度器件的制造具有重要意义。激光等离子体EUV光谱的优化是EUV光源广泛使用的前提,所以本文通过增大入射激光能量,改变光斑大小和脉冲数方法优化Sn靶EUV光谱。结果表明,Sn靶EUV光谱强度随着入射激光能量的增加而增加。通过改变透镜位置,使得光谱增强到1.27倍。此外,利用碰撞–辐射模型(CR模型)建立Sn离子分布与电子温度的对应关系。

Extreme ultraviolet (EUV) source of laser-produced plasma is of great significance for the manu-facturing of nanometer scale in integrated circuit. The optimization of laser-produced plasma EUV spectrum is the premise for the widespread use of EUV source. Therefore, it is optimized tin target EUV spectrum by increasing the incident laser energy in this paper, changing the focal spot diam-eter and number of laser pulse. The results show that the intensity of EUV radiation from tin target increases with the enhancement of incident laser energy. The EUV radiation intensity is enhanced to 1.27 times by changing the position of the focal lens. Moreover, the corresponding relationship is built between tin ion distribution and electron temperature by utilizing CR model.