Ga₂O₃薄膜制备及其日盲紫外光电探测性能的研究进展

Research Progress of Preparation and UV Photoelectric Detection Performance of Ga₂O₃ Thin Films

氧化镓(Ga2O3)作为一种直接带隙半导体材料,因其光学带隙为4.9 eV、对应辐射波长为254 nm、透过率高等特点,自发现以来一直被认为是透明导电电极、紫外探测器的优秀候选材料。本文主要介绍了氧化镓的物化性质、氧化镓薄膜的制备方法以及国内外学者利用元素掺杂提升氧化镓薄膜光学、电学、紫外探测性能的研究进展。Si、Cu、Zn、Mg、Ta、Nb等元素的掺杂均能改变Ga2O3薄膜的光学、电学特性。其中Sn掺杂和Ta掺杂可以获得较高的电导率,Ta掺杂可使薄膜具有较高的载流子迁移率,Cu、Zn等二价金属掺杂主要降低了薄膜的带隙影响其光学性能。同时基于Si、Mg、Zn、Sn、Nb等元素掺杂的Ga2O3薄膜所制备的光电探测器的性能均有所改善,相对本征Ga2O3薄膜器件的响应时间变短、光电流变大。

Gallium oxide (Ga2O3) as a direct band semiconductor material, has been considered as an excellent candidate material for transparent conductive electrodes and UV detectors since its discovery because of its optical band gap of 4.9 eV, corresponding radiation wavelength of 254 nm and high transmittance. This paper first introduces the origin, development, application, physical and chemical properties of gallium oxide. Then we review the most common processing method-the preparation of gallium oxide thin film, and the enhancement of the optical, electrical and UV-detective properties of gallium oxide thin films by element doping proposed by scholars at home and abroad. The doping of Si, Cu, Zn, Mg, Ta and Nb can change the optical and electrical properties of Ga2O3 films. Among them, Sn doping and Ta doping can obtain high electrical conductivity, and Ta doping can make the films have high carrier mobility. Cu, Zn and other divalent metal doping mainly reduces the band gap of the film affecting its optical properties. The performance of photo detectors prepared from Ga2O3 films based on Si, Mg, Zn, Sn, Nb and other elements doping are improved, and the response time is shorter and the photocurrent is larger relative to the pure Ga2O3 film devices.