忆阻器新型非线性窗口函数的伏安特性研究

Research on the Voltammetric Characteristics of a New NonlinearWindow Function of Memristor

在本文中,基于我们提出的新型窗口函数的忆阻器模型为研究对象,调节忆阻器模型中的相关参数,研究其伏安特性曲线的变化规律。由数值模拟结果表明,首先,现有窗口函数存在一些不足之处:容易发生终态问题,调控的灵活性不高;其次,选取描述窗口函数特性的内部参数为控制变量,数值模拟其伏安特性的演化规律;接着,引入外部的激励电压,并调节信号的频率。研究结果发现,我们提出的新型窗口函数不仅能有效的解决现有窗口函数的不足,而且,对外部不同频率的刺激信号也具有较好的辨识能力。上述研究结果将帮助我们更进一步的了解忆阻器的非线性特性,为未来深入理解其调控机理和研发具有特定功能的电子器件都有一定的理论意义和指导作用。

In this paper, based on the memristor model with our new window function, the regulation of voltammetric characteristics was studied by adjusting the related parameters of the memristor model. Simulation results show that, firstly, the existing window functions have some shortcomings: It is easy to appear the terminal state problem, and the flexibility of regulation needs to be improved. Secondly, to simulate the evolution of the voltammetric characteristics, the internal parameters describing the characteristics of the window function is selected as the control variables. Furthermore, to study the dynamical behavior of memristor the external excitation signal is introduced and the frequency of the external excitation signal is adjusted. The results show that our new window function not only can effectively solve the shortcomings of the existing window function, but also has a good ability to identify the stimulus signals with different frequencies. These results will help us to further study the nonlinear characteristics of memristor, and have theoretical significance and guidance for further understanding of the mechanism of memristor and the development of electronic devices with specific functions.