摘要
对In-Ga-Zn-O (IGZO)材料推广应用过程中可能的技术阻碍进行了分析,包括IGZO的成分分析、IGZO靶材制备技术分析、IGZO-TFT (IGZO薄膜晶体管)稳定性分析等。通过调节IGZO中氧化物的成分比例,可以调节IGZO的光电性能;IGZO靶材的制备选取1400℃以上的烧结温度可以得到高密度,成分均匀的靶材;通过增加遮光层、保护层、采用双栅结构、设计补偿电路等措施,可以提高a-IGZO TFT的稳定性。
The possible technical obstacles in the promotion and application of In-Ga-Zn-O(IGZO)materials were analyzed,including composition analysis of IGZO,technical analysis of IGZO target material preparation,stability analysis of IGZO-TFT,etc.The photoelectric performance of IGZO can be ad-justed by adjusting the proportion of oxide in IGZO.When using the sintering temperature of 1400?C above,we can get IGZO target with high density and uniform composition;the stability of a-IGZO TFT can be improved by adding shading layer,protective layer,adopting double gate structure,designing compensation circuit and other measures.
出处
《化学工程与技术》
CAS
2019年第3期203-209,共7页
Hans Journal of Chemical Engineering and Technology
基金
国家自然科学基金资助项目(11464003,11864005)
广西自然科学基金项目(2017GXNSFAA198315)
柳州市科技计划项目(2016B040202)
广西高校中青年教师基础能力提升项目(2018KY0324)资助的课题。
