关于一款I线光刻胶的实验研究

Research on an I-Line Photoresist

本文主要针对一款I线光刻胶进行工艺攻关,首先摸索该光刻胶在不同转速下的厚度。然后摸索该光刻胶适合的前烘、后烘、曝光、显影工艺参数。分别在接触式光刻机,投影式光刻机上进行试验,找到适用于两台光刻机的工艺窗口。试验过程中记录胶线条以及铝线条的线宽和状态。初步固定工艺条件后,针对同一生产任务,同时使用该光刻胶和AZ 5214-E光刻胶进行生产,并进行试制,将二者进行对比,试制结果大致相同。初步证明该光刻胶可以代替AZ 5214-E光刻胶的反转胶性质,在生产较掩模版上线宽细的产品时,该光刻胶更有优势。

This paper mainly focuses on the process of the photoresist. First, the thickness of the photoresist at different rotational speeds was explored. Then, the suitable process parameters of the photoresist, such as soft bake, post bake, exposure, developing, were explored. The exposure time window suitable for two lithography machines was found by experiments on two lithography machines: Contact Aligner and projection aligner. Record the line width and state of photoresist and metal during the test. After the initial fixed process conditions, for the same production task, the photo-resist and AZ 5214-E photoresist were used for production, and trial production was carried out. The comparison between the two shows that the trial production results are basically the same. It is preliminarily proved that photoresist can replace the negative properties of AZ 5214-E photoresist, and the photoresist has more advantages in making products with thinner line than mask.