原子掺杂改善石墨相氮化碳光催化性能的研究进展

Research Progress on Improving the Photocatalysis of Graphite-C₃N₄ via O, S and P Doping

石墨相氮化碳(g-C3N4)独特的结构使其在光催化性能上具有一定的优越性,使其研究受到了广泛的关注。但g-C3N4较低的比表面积以及较高的光生载流子复合率限制了其应用,为了进一步改善g-C3N4的性能,通过原子和分子掺杂改变它的电子结构来改变其物理和化学性质是一个有效途径。本文就如何优化g-C3N4的光催化性能做了简单的概述,重点介绍了非金属原子O, S, P掺杂对g-C3N4性能的影响,并展望了未来g-C3N4研究的动向。

Graphitic arbon nitride (g-C3N4) has attracted extensive attention in the field of photocatalysis because of its unique atomic and electronic structures. Some intrinsic characteristics, such as small specific surface area and rapid recombination of the photogenerated electron-hole pair, restrict its application. It is a valid pathway to improve the photocatalytic performance of g-C3N4 by changing its physical and chemical properties via atomic doping. In this paper, we overview the ways to optimize the photocatalysis of g-C3N4, and focus on the techniques and effect of atomic doping. Finally, the research perspective on the g-C3N4 is discussed.