摘要
化学机械抛光后的硅片,都会在去离子水中浸泡一段时间才会做后面的最终清洗。但浸泡时间和浸泡条件会影响到最终的清洗效果。本文研究了不同浸泡条件下,硅片经过最终清洗后表面颗粒的变化。
The chemical mechanical polishing silicon wafers will be soaked in deionized water for a period of time before the final cleaning. However, the soaking duration and the soaking condition could affect the final cleaning effect. In this article, the change of surface particles of silicon wafers which after the final cleaning in different soaking conditions is researched.
出处
《物理化学进展》
2018年第4期184-189,共6页
Journal of Advances in Physical Chemistry