高性能复合薄膜用于可穿戴电子器件的制备及其性能研究

Preparation of High-Performance Composite Films for Wearable Electronic Devices and Their Properties

二维过渡金属硫化物(TMDs)因其特有的电子结构、多样的化学组成和良好的材料特性,而具有独特的物理和化学性质,在催化、电子、生物传感、能量转换与存储等领域中被广泛研究和应用。所以基于二维材料制备复合薄膜用于可穿戴电子器件的研究进展,我们制备了基于ZIF-8@MoS2纳米颗粒的复合薄膜,并将其应用于可穿戴电子器件。MoS2层状材料良好的机械柔韧性使得其相比于传统的光电子材料在柔性器件领域有着更大的应用空间。ZIF-8@MoS2/PDMS复合膜被用作高效的TENG电材料,可以有效地增加TENG的输出性能。实验发现掺入ZIF-8@MoS2颗粒后,这种TENG的最大峰值短路电流(Isc)和开路电压(Voc)都会随着增加,分别可以达到6.2 μA和194 V。当使用0 Ω至103 MΩ的电阻器用作外部负载以测评基于ZIF-8@MoS2/PDMS复合膜制备的TENG的电输出性能时,发现随着电阻的增加,输出电压也随着增加,并且输出峰值也远远高于纯PDMS制备的TENG。此外,在1 Hz至10 Hz的频率下,短路电流和开路电压都会随着频率的增加而增加,在10 Hz时达到峰值,分别约为6.2 μA和194 V。实验结果也表明了这种电子器件具有较好的稳定性和输出性能,为未来柔性可穿戴器件的发展提供了一定的参考价值。Two-dimensional transition metal dichalcogenides (TMDs) have unique physical and chemical properties due to their unique electronic structure, diverse chemical composition and good material properties, and have been widely studied and applied in the fields of catalysis, electronics, biosensing, energy conversion and storage. Therefore, based on the research progress of preparing composite films for wearable electronic devices based on two-dimensional materials, we have prepared composite films based on ZIF-8@MoS2 nanoparticles and applied them to wearable electronic devices. Compared with traditional optoelectronic materials, MoS2 layered materials have a larger application space in the field of flexible devices due to their good mechanical flexibility. ZIF-8@MoS2/PDMS composite film is used as a high-efficiency TENG electrical material, which can effectively increase the output performance of TENG. Experiments show that the maximum peak short-circuit current (Isc) and open-circuit voltage (Voc) of this TENG can reach 6.2μA and 194V, respectively, when ZIF-8@MoS2 particles are incorporated. When a resistor from 0 Ω to 103 MΩ was used as an external load to evaluate the electrical output performance of TENG prepared based on ZIF-8@MoS2/PDMS composite film, it was found that the output voltage also increased with the increase of resistance, and the output peak value was much higher than that of TENG prepared by pure PDMS. In addition, both the short-circuit current and open-circuit voltage increase with frequency from 1 Hz to 10 Hz, peaking at 10 Hz and about 6.2 μA and 194 V, respectively. The experimental results also show that this electronic device has good stability and output performance, which provides a certain reference value for the development of flexible wearable devices in the future.