EBCMOS电荷收集效率模拟研究

Simulation Study of EBCMOS Charge Collection Efficiency

对P型基底均匀掺杂情况下电子轰击有源像素传感器(EBCMOS)的运动轨迹进行了理论模拟研究,依据载流子传输理论并结合蒙特卡罗计算方法,利用数学建模软件MATLAB,模拟了光电子经过光电阴极、近贴区、死层、扩散区、耗尽区中的运动轨迹,并根据最终的电子落点分布,计算出相应的电荷收集效率。通过改变基底掺杂浓度来观察电荷收集效率的变化,并总结了变化原因。本文可以为高性能的EBCMOS器件的研发提供一定的理论依据。

The trajectory of electron bombardedCMOS (EBCMOS) with P-type substrate homogeneous doping is simulatedtheoretically. Based on the carrier transport theory and Monte Carlocalculation method, using mathematical modeling software MATLAB, the trajectoryof photoelectron movement through the photocathode, proximity area, dead layer,diffusion area, depletion area is simulated, and the corresponding chargecollection efficiency is calculated according to the final electron drop pointdistribution. The change of charge collection efficiency is observed bychanging the base doping concentration, and the reasons for the change aresummarized. This paper can provide atheoretical basis for the research and development of high-performance EBCMOSdevices.