蒸发裂解源的设计与仿真

Design and Simulation of Evaporation Cracking Source

本文为解决分子束外延(MBE)技术中VA族元素蒸镀时容易形成分子束团簇而无法进行化合物合成的问题,设计了一种能实现分子束裂解镀膜的蒸发裂解源。首先,为了方便源材料的更换,在克努森炉的基础上实现了裂解源的双开口结构;其次,为了验证结构设计的可靠性,通过有限元软件ANSYS对蒸发区和裂解区的温度分布情况进行了稳态热仿真;最后,为了验证蒸发裂解源的实用性,通过温控仪对蒸发区和裂解区进行了升温实验。仿真分析表明:蒸发区和裂解区在工作时温度分布均匀,温度能够分别保持在527℃和1213℃以上,同时互联区的温度也能够保持在400℃以上;升温实验表明:蒸发区和裂解区的实际升温情况与仿真情况基本一致,设备符合实际生产需要。该研究为国内MBE系统中分子束裂解镀膜提供了设备基础,具有良好的应用前景。

In order to solve the problem that the VA group elements are easy to form molecular beam clusters and cannot be synthesized during the evaporation of molecular beam epitaxy (MBE) technology, this paper designs a evaporation cracking source that can realize the molecular beam cracking coating. First, in order to facilitate the replacement of the source material, the double-open struc-ture of the cracking source was realized on the basis of the Knutson Furnace;Secondly, in order to verify the reliability of the structure design, the steady-state thermal simulation of the temperature distribution in the evaporation zone and the cracking zone is carried out by the finite element soft-ware Ansys;Finally, in order to verify the practicability of the evaporation cracking source, the temperature-rising experiments were carried out in the evaporation zone and the cracking zone by the temperature-controlling instrument. The simulation analysis shows that the temperature dis-tribution of the evaporation zone and the cracking zone is uniform, and the temperature can be maintained above 527˚C and 1213˚C respectively, while the temperature in interconnection area can also be maintained above 400˚C;The temperature rise experiment shows that the actual tem-perature rise of the evaporation zone and the cracking zone is basically consistent with the simula-tion, and the equipment meets the actual production needs. This research provides equipment ba-sis for molecular beam cracking coating in domestic MBE system and has good application pro-spects.