Ag、Cu微掺杂对Au纳米线熔断时间和熔断位置的影响

Influence of Ag/Cu Micro-Doping on the Fusing Time and Fusing Position of Au Nanowires

随着高精密仪器设备对熔断器要求的不断增加,设计高精度熔断器成为研究重点。本文基于分子动力学模拟方法,研究Ag、Cu原子掺杂对Au纳米线熔断时间的影响和熔断位置的调控机制。统计分析了不同掺杂形式对Au纳米线熔断时间的影响,结合可视化技术研究熔断过程的微观结构变化情况。研究结果表明:单原子掺杂会一定程度缩短熔断时间,但不会对熔断位置产生明显影响。三层Ag或Cu原子掺杂对纳米线的熔断时间具有较大影响,明显降低了熔断时间。三层Ag、Cu原子掺杂对纳米线熔断位置的影响截然不同,Ag掺杂纳米线的熔断位置出现在掺Ag区域,而Cu掺杂纳米线的熔断位置远离掺Cu区域。Ag和Cu掺杂能够向相反方向调控纳米线的熔断位置,这对设计高精度熔断器意义重大。

With the increasing requirement on the high precision fuses of the instruments and equipments, designing high precision fuses becomes the focus of research. In this paper, the effects of Ag and Cu doping on fusing times and fusing position of the Au nanowires during the fusion processes are investigated based on molecular dynamics simulations. The effects of different doping on the fusing time of Au nanowires are analyzed by the statistical analysis method. The visualization technology has been used to trace the structural evolution of nanowires during the fusion processes. The results reveal that the fusing times are abbreviated by the single atom doping, but have no obvious influence on the fusing position to some extent. Three atomic layers doping with Ag and Cu atoms in nanowires both significantly reduce the fusing time. However, the fusing positions are quite different by doping three atomic layers of Ag or Cu atoms. The fusing position appears in the place where dopes many Ag atoms, while the situation is quite different by doping three atomic layers of Cu atoms. Ag and Cu doping can regulate the fusing time and position of nanowires, which is of great significance to design high precision fuses.