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硅掺杂对圆柱形硬质合金基体表面金刚石薄膜生长的影响

Effect of Silicon Doping on Diamond Films Depositing on Cylindrical Cemented Carbide Substrates
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摘要 硬质合金基体与金刚石薄膜的附着强度是影响涂层产品性能的重要因素。为提高薄膜与基体的附着强度,本文利用正硅酸乙酯为硅源,采用热丝化学气相沉积方法,在圆柱形硬质合金基体制备硅掺杂金刚石薄膜。利用机械抛光法,对比分析硅掺杂与普通金刚石涂层与硬质合金基体的附着强度。结果表明,硅掺杂可以显著提高金刚石薄膜与硬质合金基体的附着强度,硅元素在金刚石薄膜沉积过程中,还可以细化金刚石的晶粒。为制备高附着强度的细晶粒金刚石薄膜提供一种重要方法。 The adhesive strength has the great effect on the properties of diamond coated Co-cemented car-bide(WC-Co)substrates.In order to improve the adhesive strength between the films and sub-strates,the silicon-doped diamond films are deposited on the cylindrical substrates by hot filament chemical vapor deposition using tetraethyl orthosilicate as silicon source.The adhesive strength between diamond films and substrates is analyzed using mechanical polishing method.The results show that the silicon doping can significantly improve the adhesive strength between the diamond films and substrates.The silicon element can also refine the diamond grains during the depositing process,which provides a method for preparing the diamond films with fine grains and high adhesive strength on WC-Co substrates.
作者 张建国
机构地区 东华大学
出处 《材料科学》 CAS 2019年第8期795-802,共8页 Material Sciences
基金 上海市自然科学基金资助项目(18ZR1401100) 中央高校基本科研业务费专项资金(2232019D3-35)。
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