硅单晶电阻率标准样品均匀性的研究

Study on the Homogeneity of the Resistivity Samples of Silicon Single Crystal

简述硅单晶生长的原理,阐述硅单晶电阻率样品不同于化学分析样品,不可能完全均匀的原因;探讨在制备的过程中,影响硅单晶样品电阻率均匀性的因素,诸如,不同的掺杂晶体带来的电阻率均匀性差异、晶向对电阻率均匀性的影响、不同的拉晶及掺杂工艺导致的电阻率均匀性变化等;从测试的原理分析,测试环境、样品表面状态可能给硅单晶电阻率标定带来的干扰,以及如何尽量规避这些因素,以达到最终制备出符合使用要求的硅单晶电阻率标准样品的目的。

The thesis describes the principle how single silicon crystal grows, and why the resistivity samples of single silicon crystal is different from chemical analysis samples, which can not completely ho-mogeneity, discusses the factors which affect the homogeneity of the resistivity samples of single sil-icon crystal in preparation processes, for example, the different RRV causes by the different donors or acceptors, by the different crystal orientation, by the different CZ, FZ and inclusion processes. It also analyzes the testing principle, studies on how the testing environment, sample surface state which can disturb the calibration of the resistivity samples of single silicon crystal, discusses how to avoid these factors as far as possible, finally gets the fine resistivity samples of single silicon crystal.