磁控溅射法制备PMN-PZT/PZT异质薄膜的电性能

Electrical Properties of PMN-PZT/PZT Heterostructure Films Prepared by Magnetron Sputtering

在Pt(111)/Ti/SiO2/Si(100)基底上覆盖Pb1.2(Zr0.40, Ti0.60)O3种子层,使用磁控溅射法在种子层上交替沉积0.3Pb(Mg1/3Nb2/3)O3-0.7Pb(Zr0.52Ti0.48)O3和Pb(Zr0.52Ti0.48)O3制备多层异质结构薄膜。研究异质界面数量不变的基础上,0.3Pb(Mg1/3Nb2/3)O3-0.7Pb(Zr0.52Ti0.48)O3和Pb(Zr0.52Ti0.48)O3厚度比变化对PZT性能的影响。通过XRD测得所有薄膜具备单一的钙钛矿相和(111)择优取向。使用扫描电子显微镜(SEM)观察到多层薄膜呈现致密的没有明显缺陷的钙钛矿结构。研究发现,在PMN-PZT和PZT的厚度比为2:1的条件下介电性能达到最佳,在频率为1 kHz时测得εr = 1237.9,tanδ = 0.048。使用标准铁电测试系统测得PMN-PZT和PZT的厚度比为的样品呈现饱和的P-E滞后曲线。此外,测得在电场下,PMN-PZT和PZT的厚度比为2:1的多层异质薄膜具有最小的漏电流密度为J = 5.5 ×10−8 A/cm2。

Pb1.2(Zr0.40, Ti0.60)O3 was covered on Pt(111)/Ti/SiO2/Si(100) substrate seed layer. Multilayer heterostructure films were prepared by alternately depositing 0.3Pb(Mg1/3Nb2/3)O3-0.7Pb(Zr0.52Ti0.48)O3 and Pb(Zr0.52Ti0.48)O3 on the seed layer by magnetron sputtering. The effects of the thickness ratio of 0.3Pb(Mg1/3Nb2/3)O3-0.7Pb(Zr0.52Ti0.48)O3 and Pb(Zr0.52Ti0.48)O3 on the properties of PZT were studied. All films have a single perovskite phase and (111) preferred orientation measured by XRD. Scanning electron microscopy (SEM) showed that the multilayer films showed a dense perovskite structure without obvious defects. It is found that the dielectric properties reach the best when the thickness ratio of PMN-PZT to PZT is 2:1, which is measured at the frequency of 1 kHz εr = 1237.9, tanδ = 0.048. The sample measured by standard ferroelectric test system shows a saturated P-E hysteresis curve of 2:1. In addition, it is measured that the multilayer heterostructure film with thickness ratio of 2:1 has the minimum leakage current density of J = 5.5 ×10−8 A/cm2.