Si/SiO₂吸放气率测试及机理分析

Measurement and Analysis of Si/SiO₂ Absorption and Outgassing Rate

本文基于材料放气测量原理,采用定容、流导、双通道等方法,对Si衬底、SiO2以及Si/SiO2等有代表性的集成电路制造材料的放气率进行了测试。研究了室温条件下测试系统的本底放气率对测量结果的影响,并在定容、流导测量方法的基础上,通过精确计算本底放气率的方式,计算材料放气率;为了进一步准确进行本底放气率测量,采用双通道并行法,在测量过程中同时对系统本底放气率进行直接测量;在测量中为了研究材料放气率随温度变化规律,采用光辐射加热,温度控制范围为50℃~130℃,分别研究了不同温度下其吸放气的规律,并用QSM分析了气体的成分。

This paper is based on the principle of material outgassing measurement, and uses methods such as constant volume, conductivity, and dual channel to test the outgassing rate of representative integrated cir-cuit manufacturing materials such as Si substrate, SiO2 and Si/SiO2. The influence of the background outgassing rate of the test system on the measurement results at room temperature was studied. Based on constant volume and orifice conductance measurement methods, the material outgassing rate is calculated by accurately calculating the background outgassing rate. In order to further ac-curately measure the background outgassing rate, a dual channel parallel measurement method is adopted, which directly measures the system background outgassing rate during the measurement process. In order to study the variation of material outgassing rate with temperature during meas-urement, light radiation heating was used, with a temperature control range of 50˚C~130˚C. The laws of gas absorption and outgassing at different temperatures were studied, and the gas composi-tion was analyzed using QSM.