氧化镓中子辐照损伤模拟研究

Simulation Study of Neutron Irradiation Damage in Gallium Oxide

氧化镓(Ga2O3)材料作为代表性的超宽禁带半导体材料之一,具有宽带隙、高击穿电场等优异的物理性能,在深空探测的器件中具有广阔的应用前景。为了研究和揭示深空环境下Ga2O3材料的辐射损伤对探测器性能的影响,本文利用Geant4模拟研究了不同能量中子辐照Ga2O3材料产生的辐射损伤效应,包括位移损伤和电离损伤。结果表明:Ga2O3中中子产生的反冲原子能量主要在低能区,全部发生小角度散射;对于中子辐照产生的二次粒子,发生非弹性散射和裂变反应时能量损失大,中子有显著的核反应;中子在Ga2O3材料中输运时,还会产生一定数量的次级质子、伽马粒子、中子及alpha粒子,都会对Ga2O3材料造成电离损伤和位移损伤。模拟结果为中子辐照环境下Ga2O3材料的实验研究提供理论指导,对Ga2O3材料应用于深空探测具有参考价值。

Gallium oxide (Ga2O3) material is one of the representative ultra-wideband semiconductor materials, with wide bandgap, high breakdown electric field, and other excellent physical properties, and has a broad application prospect in the device of deep space exploration. To study and reveal the effect of radiation damage on the detector performance of Ga2O3 material in the deep space environment, this paper uses Geant4 simulation to study the radiation damage effects produced by different energies of neutron irradiation of Ga2O3 material, including displacement damage and ionization damage. The results show that the recoil atomic energy generated by neutrons in Ga2O3 is mainly in the low-energy region, and all of them are scattered at a small angle;For secondary particles produced by neutron irradiation, inelastic scattering and fission reactions occur with large energy losses, and neutrons have significant nuclear reactions;when the neutrons are transported in Ga2O3 material, a certain number of secondary protons, gamma particles, neutrons, and alpha particles are generated, which will cause ionization damage to the Ga2O3 material. Ga2O3 material, all of which cause ionization damage and displacement damage. The simulation results provide theoretical guidance for the experimental study of Ga2O3 materials under a neutron irradiation environment, which is of reference value for the application of Ga2O3 materials in deep space exploration.