金属/绝缘层/半导体纳米结构内电子传输的光电子模型的构建

Construction of Photoelectron Models for Electron Transfer within Metal/Insulating Layer/Semiconductor Nanostructures

基于金属/半导体纳米器件内的电子悖向运动且迁移路径复杂的问题,绝缘层被引入成为“单向壁垒”促使热电子单向隧穿且阻隔光生电子的传递。为有效表征局域表面等离激元共振效应的产生和激发出的热电子的单向隧穿,该文基于传统的漂移-扩散方程,解析半导体-光电子物理场的耦合过程,结合Wentzel-Kramers-Brillouin隧穿条件,建立电子隧穿的载流子浓度方程组,为界面电荷传输的新型可视化表征方法的提出奠定了理论基础。

Based on the problem that electrons in the metal/semiconductor nanodevice move in opposite directions and the migration path is complex, the insulating layer is introduced as a “unidirectional barrier” to facilitate the unidirectional tunneling of hot electrons and block the transfer of photogenerated electrons. To effectively characterize the generation of localized surface plasmon resonance effect and the unidirectional tunneling of excited hot electrons, based on the traditional drift-diffusion equation, the coupling process of semiconductor-photonic physical field is analyzed. At the same time, the Wentzel-Kramers-Brillouin tunneling condition is combined to establish the carrier concentration equation of electron tunneling, which lays a theoretical foundation for the new visual characterization method of interface charge transport.