多芯片并联压接式IGBT中压力不均对电流分布的影响分析

Influence of Uneven Pressure Distribution on Current Distribution in Paralleled Multi-Chips Press Pack IGBT

压接式IGBT器件作为柔直输电换流装备的核心元件,在长时间尺度下因制造工艺、器件老化等因素,器件内部出现压力分布不均的现象,进而造成并联子模块间电流分布不均,使部分子模块可靠性降低,老化加快。为研究压接式IGBT中压力差异与电流分布不均匀程度间的关系,本文分析了压力分布导致器件内部模块并联不均流的原因;并开展不同压力差异下的并联实验,获得了不同压力差异下的电流分布数据。通过对实验结果的分析,明确了压力差异与电流分布差异之间的关系,为探究压接式IGBT的优化设计及老化失效演变提供参考。

As a core component of the flexible HVDC equipment, the press pack IGBT device has uneven pressure distribution within the device due to factors such as manufacturing process and device aging at a long-time operation, which results in uneven current distribution among the paralleled sub-modules. This reduces the reliability of some sub-modules and accelerates them aging speed. In order to study the relationship between the pressure difference in the press pack IGBT and the degree of current imbalance, this paper analyzes the reason for the uneven current of the paralleled modules caused by the uneven pressure distribution. From the experiment under different pressure differences, data of current distribution data was collected. The relationship between the difference in pressure and the difference in current distribution is clarified through the analysis of the experimental results, which provides a reference for design optimization and exploring the evolution of aging failure in press pack IGBTs.