摘要
This study focused on the determination and analysis of an accurate analytical model for PIN diode under different bias conditions. This approach employs analytically derived expressions including the variation of the depletion regions in the device to make the used model available over a wide range of testing conditions without remake the parameters extraction procedure. The validity of the proposed extraction procedure has been verified by the very good agreement between simulated and measured current and voltage waveforms reverse recovery at different range of the operation conditions. The model is developed and simulated with the VHDL-AMS language under Ansoft Simplorer®Environment.
This study focused on the determination and analysis of an accurate analytical model for PIN diode under different bias conditions. This approach employs analytically derived expressions including the variation of the depletion regions in the device to make the used model available over a wide range of testing conditions without remake the parameters extraction procedure. The validity of the proposed extraction procedure has been verified by the very good agreement between simulated and measured current and voltage waveforms reverse recovery at different range of the operation conditions. The model is developed and simulated with the VHDL-AMS language under Ansoft Simplorer®Environment.
