摘要
In this work, we study the characteristics I-V and P-V of a silicon solar cell as well as its fill factor, its electrical power from the optimum thickness obtained in the base under variation of the irradiation energy flow of charged particles. The recombination velocity at the junction corresponding to the maximum power point was also deduced.
In this work, we study the characteristics I-V and P-V of a silicon solar cell as well as its fill factor, its electrical power from the optimum thickness obtained in the base under variation of the irradiation energy flow of charged particles. The recombination velocity at the junction corresponding to the maximum power point was also deduced.
