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Effect of Heat Treatment Conditions on Photo sensitivity of CdSe<sub>x</sub>S<sub>1-x</sub> Polycrystalline Films

Effect of Heat Treatment Conditions on Photo sensitivity of CdSe<sub>x</sub>S<sub>1-x</sub> Polycrystalline Films
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摘要 The influence of thermal treatment on the lux-ampere characteristics of polycrystalline films from the CdSe<sub>x</sub>S<sub>1-x</sub> solid solution obtained by the method of thermal evaporation in a vacuum has been investigated. It is shown that at low illumination intensities L μ of electrons increases with a power law μ ~ L<sup>γ</sup>, first with the exponent γ > 1, then with γ ≈ 0.5, and their concentration n almost does not change. Starting from the intensity L > 12 - 15 lx, the electron concentration increases strongly n ~ L<sup>β</sup> from β ≈ 3.0, and the parameters n and μ reach relatively high values ~(10<sup>15</sup> - 10<sup>16</sup>) sm<sup>-3</sup> and ~(150 - 200) sm<sup>2</sup>/V&#903;s, however further, at L > 50 lx, a weak dependence of n(L) and μ(L) with β, γ < 1.0 is found. The obtained experimental results are interpreted on the basis of a model of a semiconductor film with intergranular potential barriers when the concentration and barrier mechanisms of photoconductivity operate simultaneously. The influence of thermal treatment on the lux-ampere characteristics of polycrystalline films from the CdSe<sub>x</sub>S<sub>1-x</sub> solid solution obtained by the method of thermal evaporation in a vacuum has been investigated. It is shown that at low illumination intensities L μ of electrons increases with a power law μ ~ L<sup>γ</sup>, first with the exponent γ > 1, then with γ ≈ 0.5, and their concentration n almost does not change. Starting from the intensity L > 12 - 15 lx, the electron concentration increases strongly n ~ L<sup>β</sup> from β ≈ 3.0, and the parameters n and μ reach relatively high values ~(10<sup>15</sup> - 10<sup>16</sup>) sm<sup>-3</sup> and ~(150 - 200) sm<sup>2</sup>/V&#903;s, however further, at L > 50 lx, a weak dependence of n(L) and μ(L) with β, γ < 1.0 is found. The obtained experimental results are interpreted on the basis of a model of a semiconductor film with intergranular potential barriers when the concentration and barrier mechanisms of photoconductivity operate simultaneously.
作者 Nosirjon Khaydarovich Yuldashev Dilkhumor Tolibjonovna Mamadieva Valijon Tulqinovich Mirzaev Dadahon Sherquzievich Xidirov Nosirjon Khaydarovich Yuldashev;Dilkhumor Tolibjonovna Mamadieva;Valijon Tulqinovich Mirzaev;Dadahon Sherquzievich Xidirov(Department of Physics, Ferghana Polytechnic Institute, Ferghana, Uzbekistan)
机构地区 Department of Physics
出处 《Journal of Applied Mathematics and Physics》 2022年第10期3208-3217,共10页 应用数学与应用物理(英文)
关键词 Solid Solutions CdSe<sub>x</sub>S<sub>1-x</sub> Polycrystalline Thin Film PHOTOCONDUCTIVITY Ther-mal Treatment Lux-Ampere Characteristic PHOTOCURRENT Light Intensity Solid Solutions CdSe<sub>x</sub>S<sub>1-x</sub> Polycrystalline Thin Film Photoconductivity Ther-mal Treatment Lux-Ampere Characteristic Photocurrent Light Intensity
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