摘要
The present work describes the circuit model based analysis of symmetrically tunnel diode loaded microstrip antenna with parasitic elements. To optimize the antenna characteristics, a systematic study has been carried out as a function of tunnel diode bias voltage, space between parasitic patch and fed patch. The results obtained from antenna radiation pattern depict that an improvement of 5.8 MHz in bandwidth can be achieved if the symmetrically tunnel diode is loaded with patch along with parasitic elements of gap (s) = 3.6 cm. It has also been noted that at this state the radiations are more powerful i.e. 0.5647 dB as compared to single patch design.
The present work describes the circuit model based analysis of symmetrically tunnel diode loaded microstrip antenna with parasitic elements. To optimize the antenna characteristics, a systematic study has been carried out as a function of tunnel diode bias voltage, space between parasitic patch and fed patch. The results obtained from antenna radiation pattern depict that an improvement of 5.8 MHz in bandwidth can be achieved if the symmetrically tunnel diode is loaded with patch along with parasitic elements of gap (s) = 3.6 cm. It has also been noted that at this state the radiations are more powerful i.e. 0.5647 dB as compared to single patch design.
